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 RQG1001UPAQF
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
REJ03G1551-0100 Rev.1.00 Jul 20, 2007
Features
* Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc. * High gain and low noise. MSG = 25 dB typ., NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz MSG = 22 dB typ., NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ., NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz MSG = 15 dB typ., NF = 1.3 dB typ. at VCE = 2 V, IC = 10 mA, f = 5.8 GHz * High transition frequency fT = 35 GHz typ. * CMPAK-4 (2.0 x 1.25 x 1.1(max) mm)
Outline
RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4)
2 3 1 4
1. Emitter 2. Collector 3. Emitter 4. Base
Note:
Marking is "UP-".
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Pc Tj Tstg Ratings 8 3.5 1.2 35 100 250 note1 150 -55 to +150 Unit V V V mA mW mW C C
Notes: 1. Value on PCB (FR-4 : 40 x 40 x 1.6mm double side)
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 1 of 16
RQG1001UPAQF
Electrical Characteristics
(Ta = 25C)
Item Symbol DC current transfer ratio hFE Reverse Transfer Capacitance Cre Transition Frequency fT 0.9 GHz 1.8 GHz Forward Transfer |S21|2 Coefficient 2.4 GHz 5.8 GHz 0.9 GHz Maximum Stable Gain
Note1
Min. 100
Typ 200 0.08 35 22 19 17 11 25 22 21 15 13 22 19.5 18 11.5 0.7 0.75 0.85 1.3
Max. 300
Unit pF GHz
Test Conditions VCE = 2 V, IC = 5 mA VCB = 2 V, IE = 0, f = 1 MHz VCE = 2 V, IC = fT peak, f = 1 GHz VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 10 mA VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 10 mA
dB
Maximum Available Gain
Note2
1.8 GHz 2.4 GHz 5.8 GHz 5.8 GHz 0.9 GHz 1.8 GHz 2.4 GHz 5.8 GHz 0.9 GHz 1.8 GHz 2.4 GHz 5.8 GHz
MSG
dB
MAG
dB
VCE = 2 V, IC = 10 mA
Power Gain
PG

dB
VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 10 mA VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 10 mA
Noise figure
NF

dB
Notes: 1. MSG = |S21| / |S12| 2 1/2 2. MAG = |S21| / |S12|(K-(K -1) )
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 2 of 16
RQG1001UPAQF
Main Characteristics
Collector Power Dissipation Curve
Collector Power Dissipation Pc (mW)
500 35 Value on PCB (FR-4 : 40 x 40 x 1.6 mm double side)
Typical Output Characteristics
200 A 180 A
160 A
IC (mA)
30 25 20 15 10 5 0 1 2
140 A
400
120 A
100 A
80 A
Collector Current
300
200
60 A
40 A
IB = 20 A
100
0
50
100
150
200
3
Ambient Temperature Ta (C)
Collector to Emitter Voltage VCE (V) Reverse Transfer Capacitance vs. Collector to Base Voltage
0.20 f = 1 MHz 0.16
300
250 2V 200 150 100 50 0 0.1 VCE = 1 V 3V
Reverse Transfer Capacitance Cre (pF)
DC Current Transfer Ratio vs. Collector Current
DC Current Transfer Ratio hFE
0.12
0.08
0.04
1
10
100
0
1
2
3
Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current
Gain Bandwidth Product fT (GHz)
45 40 35 30 25 20 15 10 5 0 1 10 100 VCE = 1 V 2V 3V f = 1 GHz
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 3 of 16
RQG1001UPAQF
|S21|2, MSG, MAG vs. Collector Current
30 VCE = 2 V f = 1.8 GHz
|S21|2, MSG, MAG vs. Collector Current
30 VCE = 3 V f = 1.8 GHz
|S21|2, MSG, MAG (dB)
MAG S21
20 15 10 5 0
|S21|2, MSG, MAG (dB)
25
MSG
25 20 15 10 5 0
MSG
MAG
S21
1
10
100
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
|S21|2, MSG, MAG vs. Collector Current
30 VCE = 2 V f = 2.4 GHz MSG MAG 20 S21 15 10 5 0
|S21|2, MSG, MAG vs. Collector Current
30 VCE = 3 V f = 2.4 GHz MSG MAG S21 15 10 5 0
|S21|2, MSG, MAG (dB)
|S21|2, MSG, MAG (dB)
100
25
25 20
1
10
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
|S21|2, MAG vs. Collector Current
30 25 30 VCE = 2 V f = 5.8 GHz 25
|S21|2, MAG vs. Collector Current
VCE = 3 V f = 5.8 GHz
|S21|2, MAG (dB)
|S21|2, MAG (dB)
20 15 10 5 0
20 15 10 5 0
MAG S21
MAG S21
1
10
100
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 4 of 16
RQG1001UPAQF
|S21|2, MSG, MAG vs. Frequency
50 45 50 VCE = 2 V IC = 10 mA MSG
|S21|2, MSG, MAG vs. Frequency
VCE = 3 V IC = 10 mA MSG
45
|S21|2, MSG, MAG (dB)
|S21|2, MSG, MAG (dB)
40 35 30 25 20 15 10 5 0 0.1 1 10 S21 MAG
40 35 30 25 20 15 10 5 0 0.1 1 10 S21 MAG
Frequency f (GHz)
Frequency f (GHz)
Power Gain vs. Collector Current
24 VCE = 2 V f = 1.8 GHz 20 16 12 5.8 GHz 8 4 0 2.4 GHz 24
Power Gain vs. Collector Current
VCE = 3 V f = 1.8 GHz
Power Gain PG (dB)
Power Gain PG (dB)
20 2.4 GHz 16 12 5.8 GHz 8 4 0
1
10
100
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
Noise Figure vs. Collector Current
4 VCE = 2 V 4
Noise Figure vs. Collector Current
VCE = 3 V
Noise Figure NF (dB)
3
Noise Figure NF (dB)
3
2 5.8 GHz 1 2.4 GHz f = 1.8 GHz 0 1 10 100
2 5.8 GHz 1 2.4 GHz f = 1.8 GHz 0 1 10 100
Collector Current IC (mA)
Collector Current IC (mA)
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 5 of 16
RQG1001UPAQF
3rd. Order Intercept Point (IP3) 20 20 3rd. Order Intercept Point (IP3)
Output Power POUT (dBm)
Output Power POUT (dBm)
10 0
Fundamental
10 0
Fundamental
3rd. IMD
3rd. IMD
-10 -20 -30 -40 -40
VCE = 2 V IC = 5 mA fd = 1.8 GHz fud = 1.801 GHz
-10 -20 -30 -40 -40
VCE = 2 V IC = 10 mA fd = 1.8 GHz fud = 1.801 GHz
-30
-20
-10
0
10
20
-30
-20
-10
0
10
20
Input Power PIN (dBm)
Input Power PIN (dBm)
3rd. Order Intercept Point (IP3) 20 20
3rd. Order Intercept Point (IP3)
Output Power POUT (dBm)
Output Power POUT (dBm)
10 0 -10 -20 -30 -40 -40
Fundamental
10 0 -10 -20 -30 -40 -40
Fundamental
3rd. IMD
3rd. IMD
VCE = 2 V IC = 5 mA fd = 2.4 GHz fud = 2.401 GHz
VCE = 2 V IC = 10 mA fd = 2.4 GHz fud = 2.401 GHz
-30
-20
-10
0
10
20
-30
-20
-10
0
10
20
Input Power PIN (dBm)
Input Power PIN (dBm)
3rd. Order Intercept Point (IP3) 20 20
VCE = 2 V IC = 5 mA fd = 5.8 GHz fud = 5.801 GHz
3rd. Order Intercept Point (IP3)
VCE = 2 V IC = 10 mA fd = 5.8 GHz fud = 5.801 GHz
Output Power POUT (dBm)
Output Power POUT (dBm)
10 0 -10
10 0 -10
Fundamental
Fundamental
3rd. IMD
3rd. IMD
-20 -30 -40 -40
-20 -30 -40 -40
-30
-20
-10
0
10
20
-30
-20
-10
0
10
20
Input Power PIN (dBm)
Input Power PIN (dBm)
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 6 of 16
RQG1001UPAQF
3rd. Order Intercept Point (IP3) 20
Output Power POUT (dBm)
10 0
Fundamental
3rd. IMD
-10 -20 -30 -40 -40
VCE = 2 V IC = 20 mA fd = 1.8 GHz fud = 1.801 GHz
-30
-20
-10
0
10
20
Input Power PIN (dBm)
3rd. Order Intercept Point (IP3) 20
Output Power POUT (dBm)
10 0 -10 -20 -30 -40 -40
Fundamental
3rd. IMD
VCE = 2 V IC = 20 mA fd = 2.4 GHz fud = 2.401 GHz
-30
-20
-10
0
10
20
Input Power PIN (dBm)
3rd. Order Intercept Point (IP3) 20
Output Power POUT (dBm)
VCE = 2 V IC = 20 mA fd = 5.8 GHz fud = 5.801 GHz
10 0 -10 -20 -30 -40 -40
Fundamental
3rd. IMD
-30
-20
-10
0
10
20
Input Power PIN (dBm)
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 7 of 16
RQG1001UPAQF
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 -10 -.2 -5 -4 -3 -.4 -2 -.6 -.8 -1 -1.5 1 1.5 2
S21 Parameter vs. Frequency Scale: 15 / div.
75 60 45 30 15
Condition: VCE = 2 V , Zo = 50 100 to 1000 MHz (100 MHz step) 1000 to 2000 MHz (200 MHz step) 2000 to 6000 MHz (400 MHz step) IC = 1 mA IC = 3 mA IC = 5 mA IC = 7 mA IC = 10 mA IC = 20 mA IC = 30 mA
Condition: VCE = 2 V , Zo = 50 100 to 6000 MHz (100 MHz step) IC = 1 mA IC = 3 mA IC = 5 mA IC = 7 mA IC = 10 mA IC = 20 mA IC = 30 mA
S12 Parameter vs. Frequency
0.5 0.4
S22 Parameter vs. Frequency
.8 .6 .4 1 1.5 2 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 -10 -.2 -5 -4 -3 -.4 -2 -.6 -.8 -1 -1.5
Scale: 0.1 / div.
0.3 0.2 0.1
Condition: VCE = 2 V , Zo = 50 100 to 6000 MHz (100 MHz step) IC = 1 mA IC = 3 mA IC = 5 mA IC = 7 mA IC = 10 mA IC = 20 mA IC = 30 mA
Condition: VCE = 2 V , Zo = 50 100 to 1000 MHz (100 MHz step) 1000 to 2000 MHz (200 MHz step) 2000 to 6000 MHz (400 MHz step) IC = 1 mA IC = 3 mA IC = 5 mA IC = 7 mA IC = 10 mA IC = 20 mA IC = 30 mA
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 8 of 16
RQG1001UPAQF
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 -10 -.2 -5 -4 -3 -.4 -2 -.6 -.8 -1 -1.5 1 1.5 2
S21 Parameter vs. Frequency
75 60 45 30 15
Scale: 15 / div.
Condition: VCE = 3 V , Zo = 50 100 to 1000 MHz (100 MHz step) 1000 to 2000 MHz (200 MHz step) 2000 to 6000 MHz (400 MHz step) IC = 1 mA IC = 3 mA IC = 5 mA IC = 7 mA IC = 10 mA IC = 20 mA IC = 30 mA
Condition: VCE = 3 V , Zo = 50 100 to 6000 MHz (100 MHz step) IC = 1 mA IC = 3 mA IC = 5 mA IC = 7 mA IC = 10 mA IC = 20 mA IC = 30 mA
S12 Parameter vs. Frequency
0.5 0.4
S22 Parameter vs. Frequency
.8 .6 .4 1 1.5 2 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 -10 -.2 -5 -4 -3 -.4 -2 -.6 -.8 -1 -1.5
Scale: 0.1 / div.
0.3 0.2 0.1
Condition: VCE = 3 V , Zo = 50 100 to 6000 MHz (100 MHz step) IC = 1 mA IC = 3 mA IC = 5 mA IC = 7 mA IC = 10 mA IC = 20 mA IC = 30 mA
Condition: VCE = 3 V , Zo = 50 100 to 1000 MHz (100 MHz step) 1000 to 2000 MHz (200 MHz step) 2000 to 6000 MHz (400 MHz step) IC = 1 mA IC = 3 mA IC = 5 mA IC = 7 mA IC = 10 mA IC = 20 mA IC = 30 mA
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 9 of 16
RQG1001UPAQF
S Parameter
(VCE = 2 V, IC = 5 mA, ZO = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 MAG 0.923 0.915 0.896 0.878 0.855 0.828 0.803 0.774 0.743 0.712 0.682 0.650 0.621 0.594 0.566 0.540 0.517 0.495 0.475 0.455 0.423 0.395 0.373 0.357 0.345 0.338 0.332 0.328 0.327 0.330 0.335 0.340 0.346 0.352 0.359 0.366 0.374 0.381 0.388 0.396 ANG(deg.) -6.2 -12.3 -18.2 -24.5 -30.4 -36.3 -41.8 -47.2 -52.9 -58.1 -63.2 -68.4 -73.1 -78.0 -82.8 -87.5 -92.1 -96.7 -101.1 -105.8 -114.6 -123.6 -132.2 -141.1 -149.5 -157.6 -165.6 -172.7 -179.6 174.2 168.2 162.6 157.3 152.4 147.7 143.2 139.0 135.1 131.3 127.5 MAG 14.39 14.26 14.03 13.78 13.53 13.22 12.78 12.41 12.15 11.75 11.35 11.01 10.60 10.21 9.87 9.53 9.18 8.85 8.54 8.25 7.69 7.21 6.76 6.36 5.99 5.66 5.36 5.08 4.83 4.61 4.40 4.22 4.04 3.88 3.73 3.60 3.46 3.35 3.23 3.13 S21 ANG(deg.) 173.5 167.6 162.0 156.6 151.5 146.7 142.1 137.6 133.5 129.1 125.1 121.1 117.5 114.1 110.7 107.4 104.4 101.5 98.7 96.0 90.9 86.0 81.5 77.2 73.1 69.1 65.3 61.7 58.3 54.9 51.5 48.2 45.0 41.9 38.7 35.6 32.6 29.6 26.6 23.6 MAG 0.0092 0.0094 0.0144 0.0167 0.0207 0.0254 0.0285 0.0310 0.0340 0.0364 0.0403 0.0400 0.0421 0.0452 0.0464 0.0478 0.0498 0.0508 0.0516 0.0528 0.0556 0.0569 0.0599 0.0616 0.0633 0.0662 0.0680 0.0695 0.0719 0.0743 0.0772 0.0795 0.0817 0.0849 0.0868 0.0894 0.0931 0.0949 0.0978 0.1013 S12 ANG(deg.) 34.3 83.2 73.0 76.6 68.8 70.2 65.0 61.7 60.5 58.8 56.0 53.8 51.7 50.4 48.2 47.9 46.6 45.0 44.5 43.6 41.7 41.1 38.9 39.1 38.3 37.4 36.9 35.7 35.8 35.2 34.1 33.9 32.9 31.9 31.3 30.5 29.4 28.6 27.0 26.2 MAG 0.979 0.987 0.974 0.956 0.935 0.912 0.887 0.860 0.833 0.806 0.781 0.754 0.729 0.707 0.684 0.663 0.644 0.624 0.606 0.589 0.558 0.530 0.504 0.482 0.461 0.443 0.425 0.409 0.396 0.384 0.372 0.361 0.351 0.341 0.331 0.321 0.312 0.304 0.294 0.285 S22 ANG(deg.) -3.2 -7.1 -10.7 -14.0 -17.2 -20.1 -23.0 -25.6 -27.9 -30.1 -32.1 -34.0 -35.8 -37.4 -38.9 -40.2 -41.6 -42.8 -44.1 -45.1 -47.3 -49.3 -51.4 -53.3 -55.1 -57.2 -59.2 -61.0 -62.9 -65.0 -67.3 -69.5 -71.7 -73.9 -76.2 -78.6 -81.1 -83.5 -86.0 -88.5
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 10 of 16
RQG1001UPAQF
S Parameter
(VCE = 2 V, IC = 10 mA, ZO = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 MAG 0.864 0.840 0.804 0.769 0.725 0.679 0.636 0.592 0.551 0.514 0.478 0.446 0.417 0.392 0.367 0.347 0.329 0.313 0.299 0.286 0.267 0.254 0.244 0.240 0.239 0.241 0.244 0.249 0.254 0.262 0.270 0.279 0.288 0.296 0.305 0.314 0.323 0.332 0.341 0.349 ANG(deg.) -9.4 -18.0 -26.3 -34.7 -42.4 -49.7 -56.4 -62.7 -69.0 -74.6 -80.1 -85.5 -90.3 -95.3 -100.3 -105.1 -110.0 -114.8 -119.8 -124.6 -134.2 -143.7 -153.0 -162.2 -170.3 -178.5 174.3 167.5 162.1 156.8 151.9 147.3 142.9 139.0 135.1 131.7 128.4 125.2 122.0 119.1 MAG 25.72 25.13 24.22 23.24 22.19 21.06 19.83 18.72 17.70 16.67 15.71 14.85 14.02 13.27 12.60 11.97 11.39 10.87 10.38 9.93 9.14 8.45 7.85 7.33 6.87 6.46 6.10 5.76 5.47 5.21 4.97 4.75 4.55 4.36 4.19 4.04 3.89 3.76 3.63 3.51 S21 ANG(deg.) 170.8 162.4 154.7 147.6 141.1 135.0 129.6 124.4 119.9 115.6 111.6 107.9 104.6 101.5 98.6 95.8 93.2 90.7 88.4 86.1 81.8 77.8 74.0 70.4 66.9 63.5 60.2 57.1 54.1 51.1 48.1 45.2 42.3 39.4 36.6 33.7 30.9 28.1 25.3 22.5 MAG 0.0082 0.0078 0.0121 0.0174 0.0196 0.0214 0.0247 0.0269 0.0270 0.0296 0.0319 0.0334 0.0348 0.0368 0.0378 0.0390 0.0414 0.0428 0.0440 0.0444 0.0486 0.0512 0.0541 0.0579 0.0611 0.0630 0.0659 0.0687 0.0722 0.0761 0.0787 0.0831 0.0861 0.0898 0.0925 0.0960 0.0994 0.1020 0.1063 0.1093 S12 ANG(deg.) 99.3 94.0 80.8 71.6 68.5 64.0 62.5 59.2 58.5 55.8 54.7 54.7 54.6 54.4 53.4 53.4 52.8 52.3 52.2 51.2 51.2 50.7 49.6 48.6 48.2 47.2 46.9 46.0 44.9 44.2 42.6 41.5 40.4 38.9 37.6 36.3 34.8 33.4 31.7 30.2 MAG 0.968 0.967 0.937 0.902 0.863 0.822 0.782 0.744 0.707 0.678 0.649 0.622 0.597 0.577 0.556 0.538 0.521 0.505 0.491 0.477 0.454 0.432 0.412 0.395 0.380 0.365 0.351 0.337 0.327 0.318 0.308 0.297 0.289 0.280 0.270 0.261 0.252 0.244 0.235 0.226 S22 ANG(deg.) -5.9 -10.4 -15.0 -19.2 -23.1 -26.1 -29.0 -31.2 -33.0 -34.9 -36.3 -37.5 -38.6 -39.6 -40.6 -41.4 -42.3 -43.0 -43.9 -44.6 -46.1 -47.7 -49.3 -51.0 -52.8 -54.8 -56.6 -58.3 -60.4 -62.5 -64.8 -67.1 -69.6 -71.9 -74.4 -76.9 -79.5 -82.1 -84.7 -87.3
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 11 of 16
RQG1001UPAQF
S Parameter
(VCE = 3 V, IC = 5 mA, ZO = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 MAG 0.930 0.918 0.902 0.883 0.859 0.834 0.809 0.781 0.750 0.719 0.688 0.656 0.627 0.600 0.571 0.544 0.522 0.499 0.479 0.458 0.425 0.397 0.374 0.357 0.343 0.335 0.329 0.324 0.323 0.326 0.330 0.334 0.340 0.346 0.353 0.360 0.367 0.375 0.382 0.390 ANG(deg.) -6.3 -12.3 -18.0 -24.1 -30.0 -35.8 -41.1 -46.5 -52.3 -57.3 -62.4 -67.5 -72.2 -76.9 -81.7 -86.5 -90.8 -95.4 -99.9 -104.5 -113.2 -122.1 -130.9 -139.6 -147.9 -156.0 -164.1 -171.3 -178.1 175.5 169.4 163.7 158.4 153.2 148.5 144.0 139.9 135.8 131.9 128.2 MAG 14.29 14.19 13.97 13.74 13.50 13.20 12.77 12.42 12.18 11.78 11.39 11.06 10.65 10.26 9.92 9.58 9.24 8.91 8.60 8.31 7.75 7.26 6.81 6.42 6.05 5.71 5.41 5.13 4.88 4.66 4.45 4.26 4.09 3.92 3.77 3.64 3.50 3.38 3.27 3.16 S21 ANG(deg.) 173.6 167.7 162.2 156.9 151.9 147.1 142.5 138.0 134.0 129.6 125.6 121.6 117.9 114.6 111.2 107.9 104.9 102.0 99.2 96.4 91.3 86.5 82.0 77.7 73.5 69.6 65.8 62.2 58.8 55.4 52.0 48.7 45.5 42.4 39.3 36.1 33.1 30.1 27.1 24.1 MAG 0.0045 0.0087 0.0146 0.0156 0.0205 0.0252 0.0265 0.0302 0.0318 0.0353 0.0373 0.0386 0.0411 0.0436 0.0440 0.0456 0.0475 0.0482 0.0495 0.0505 0.0527 0.0549 0.0571 0.0594 0.0609 0.0629 0.0648 0.0662 0.0686 0.0713 0.0743 0.0761 0.0788 0.0814 0.0838 0.0865 0.0893 0.0917 0.0937 0.0979 S12 ANG(deg.) 46.5 92.6 67.7 76.6 68.1 68.1 66.6 62.5 61.0 59.0 55.2 54.0 53.4 50.7 48.5 47.9 46.6 46.0 45.5 44.1 42.6 41.6 41.2 41.0 39.6 38.2 37.3 36.9 37.1 36.3 35.8 34.9 34.5 33.3 33.1 31.7 31.0 29.9 28.6 27.7 MAG 0.986 0.985 0.976 0.955 0.938 0.916 0.892 0.866 0.840 0.815 0.790 0.766 0.742 0.720 0.698 0.678 0.658 0.640 0.622 0.606 0.576 0.548 0.524 0.503 0.482 0.463 0.447 0.431 0.418 0.407 0.395 0.385 0.374 0.364 0.356 0.345 0.337 0.329 0.320 0.311 S22 ANG(deg.) -3.6 -6.8 -10.2 -13.3 -16.5 -19.2 -22.0 -24.5 -26.7 -28.8 -30.8 -32.6 -34.2 -35.8 -37.3 -38.5 -39.8 -41.0 -42.2 -43.3 -45.4 -47.3 -49.2 -51.1 -52.9 -55.0 -56.8 -58.6 -60.4 -62.6 -64.6 -66.8 -68.8 -71.3 -73.3 -75.7 -78.1 -80.4 -82.8 -85.2
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 12 of 16
RQG1001UPAQF
S Parameter
(VCE = 3 V, IC = 10 mA, ZO = 50 )
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 MAG 0.869 0.847 0.814 0.778 0.732 0.686 0.645 0.601 0.558 0.520 0.486 0.452 0.422 0.397 0.373 0.351 0.332 0.315 0.300 0.287 0.266 0.251 0.241 0.235 0.233 0.235 0.238 0.241 0.246 0.255 0.261 0.270 0.279 0.288 0.297 0.306 0.314 0.323 0.331 0.340 ANG(deg.) -9.2 -17.6 -25.7 -33.9 -41.5 -48.8 -55.3 -61.5 -67.8 -73.2 -78.5 -83.8 -88.7 -93.6 -98.4 -103.3 -107.9 -112.8 -117.5 -122.3 -131.7 -141.4 -150.6 -159.8 -168.4 -176.3 176.0 169.1 163.4 158.2 153.0 148.1 144.0 139.9 136.1 132.5 129.0 125.8 122.7 119.6 MAG 25.72 25.14 24.24 23.28 22.26 21.13 19.92 18.82 17.81 16.80 15.83 14.98 14.14 13.40 12.72 12.09 11.51 10.98 10.49 10.04 9.24 8.55 7.95 7.42 6.96 6.54 6.18 5.84 5.54 5.28 5.03 4.81 4.61 4.42 4.25 4.10 3.95 3.81 3.68 3.56 S21 ANG(deg.) 170.8 162.6 155.0 148.1 141.5 135.5 130.1 125.0 120.4 116.1 112.2 108.5 105.1 102.0 99.1 96.3 93.7 91.2 88.9 86.6 82.3 78.3 74.5 70.9 67.4 64.0 60.7 57.6 54.6 51.6 48.6 45.7 42.8 40.0 37.1 34.3 31.5 28.7 25.9 23.1 MAG 0.0029 0.0068 0.0133 0.0152 0.0180 0.0209 0.0231 0.0250 0.0271 0.0295 0.0308 0.0319 0.0339 0.0350 0.0366 0.0382 0.0397 0.0401 0.0419 0.0435 0.0464 0.0490 0.0520 0.0554 0.0580 0.0613 0.0641 0.0668 0.0705 0.0737 0.0770 0.0806 0.0838 0.0860 0.0901 0.0929 0.0967 0.0999 0.1027 0.1058 S12 ANG(deg.) 161.5 89.6 71.1 73.5 67.2 64.6 63.0 59.1 57.3 57.6 56.0 54.4 54.4 55.5 54.1 53.1 52.1 52.0 51.5 52.4 51.1 51.3 50.4 49.7 49.0 47.8 47.2 46.7 46.2 45.0 43.8 42.6 41.7 40.5 39.0 37.6 36.4 34.5 33.1 31.5 MAG 0.979 0.971 0.942 0.906 0.870 0.830 0.791 0.755 0.723 0.691 0.663 0.637 0.614 0.592 0.574 0.555 0.540 0.524 0.510 0.497 0.474 0.453 0.433 0.418 0.401 0.388 0.374 0.361 0.350 0.341 0.331 0.321 0.313 0.303 0.294 0.286 0.276 0.269 0.260 0.252 S22 ANG(deg.) -6.0 -9.8 -14.3 -18.2 -21.9 -24.9 -27.6 -29.8 -31.6 -33.2 -34.6 -35.8 -36.9 -37.9 -38.9 -39.5 -40.4 -41.1 -41.9 -42.7 -44.2 -45.8 -47.3 -48.9 -50.5 -52.6 -54.3 -55.9 -57.8 -60.0 -62.4 -64.5 -66.9 -69.1 -71.6 -74.0 -76.4 -78.8 -81.4 -83.8
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 13 of 16
RQG1001UPAQF
RQG1001 5.8 GHz Evaluation Board
Evaluation Board Pattern Layout
Circuit
VBB 2.2 F 2.2 F VCC
10 pF
1000 pF 39 1 nH
1000 pF
10 pF
1 pF
OUT
8.2 nH IN 1 pF
0.2 pF
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 14 of 16
RQG1001UPAQF
RLin, Rlout, |S21|2 vs f
15 |S21|2
RLin, Rlout, |S21|2 (dB)
0 RLin
-15 RLout -30 VCE = 2 V IC = 10 mA 6 8 10
0
2
4
Frequency f (GHz)
PG, NF vs IC
14 VCE = 2 V f = 5.8 GHz PG
Power Gain PG (dB) Noise Figure NF (dB)
12 10 8 6 4 2 0 1
NF
10
100
Collector Current IC (mA)
Pout, OIP3 vs Pin
Output Power Pout (dBm) Output Third Order Intercept Point OIP3 (dBm)
20 10 0 -10 OIP3 -20 -30 -40 -40 VCE = 2 V IC = 10 mA fd = 5.8 GHz fud = 5.801 GHz
Pout
-30
-20
-10
0
10
20
Input Power Pin ( dBm)
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 15 of 16
RQG1001UPAQF
Package Dimensions
Package Name CMPAK-4
JEITA Package Code SC-82AB
RENESAS Code PTSP0004ZA-A
Previous Code CMPAK-4(T) / CMPAK-4(T)V
MASS[Typ.] 0.006g
D
A
e2 b1
B B
e
Q c
E
HE
LP
L A A L1
A3
Reference Symbol
Dimension in Millimeters
xM
SA
b
e2
e
A2
A
l1
yS
b
A1 S
b5
e1
b1 l1
c
c
b4 B-B Section Pattern of terminal position areas
A-A Section
A A1 A2 A3 b b1 c D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q
Min 0.8 0 0.8 0.25 0.35 0.1 1.8 1.15 1.8 0.3 0.1 0.2
Nom 0.9 0.25 0.3 0.4 0.16 2.0 1.25 0.65 0.6 2.1
Max 1.1 0.1 1.0 0.4 0.5 0.26 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 0.9
1.5 0.2
Ordering Information
Part No. Quantity Shipping Container 178 mm reel, 8 mm emboss taping RQG1001UP-TL-E 3000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 16 of 16
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0


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